Graphene devices such as field effect transistors require deposition of dielectrics for top gating. However, conventional deposition techniques degrade the graphene/dielectric interface. Hexagonal boron nitride (h-BN) is a promising dielectric for graphene, because it forms a hexagonal lattice, the same shape as graphene’s lattice.

We showed (Gigliotti et al. 2020, ACS Nano, doi:10.1021/acsnano.0c04164, arXiv:2011.11184) that metal-organic vapor phase epitaxy (MOVPE) produces highly ordered all-epitaxial BN/graphene/SiC heterostructures.